(Singapore)
Product Summary
The RW1A020ZP-T2R is a Silicon P-channel MOSFET. It is suitable for switching.
Parametrics
RW1A020ZP-T2R absolute maximum ratings: (1)Drain-source voltage, VDSS: -12V; (2)Gate-source voltage, VGSS: ±10V; (3)Drain current, ID: ±2A; IDP: ±6A; (4)source current, IS: -0.5A; ISP: -6A; (5)Total power dissipation, PD: 0.7W; (6)Channel temperature, Tch: 150℃; (7)Range of Storage temperature, Tstg: -55 to 150℃.
Features
RW1A020ZP-T2R features: (1)Low on-resistance; (2)High power package; (3)Low voltage drive. (1.5V).
Diagrams
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 RW1A020ZPT2R |
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MOSFET P-CH 12V 2A WEMT6 |
Data Sheet |
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